发明申请
US20110176379A1 SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL ARRAY OF OPEN BIT LINE TYPE AND CONTROL METHOD THEREOF
审中-公开
具有开放式线型存储器单元阵列的半导体存储器件及其控制方法
- 专利标题： SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL ARRAY OF OPEN BIT LINE TYPE AND CONTROL METHOD THEREOF
- 专利标题（中）： 具有开放式线型存储器单元阵列的半导体存储器件及其控制方法
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申请号： US13008408申请日： 2011-01-18
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公开(公告)号： US20110176379A1公开(公告)日： 2011-07-21
- 发明人: Shinichi TAKAYAMA , Akira Kotabe , Kazuo Ono , Tomonori Sekiguchi , Yoshimitsu Yanagawa , Riichiro Takemura
- 申请人： Shinichi TAKAYAMA , Akira Kotabe , Kazuo Ono , Tomonori Sekiguchi , Yoshimitsu Yanagawa , Riichiro Takemura
- 优先权： JP2010-008269 20100118
- 主分类号： G11C7/06
- IPC分类号： G11C7/06
摘要：
A semiconductor memory device includes: first and second bit lines of an open bit-line system; a sense amplifier that amplifies a potential difference between the first and second bit lines; a pair of first and second local data lines corresponding to the first and second bit lines, respectively; and a write amplifier circuit. The write amplifier circuit changes a potential of the second local data line without changing a potential of the first local data line at a time of writing data for the first bit line, and changes a potential of the first local data line without changing a potential of the second local data line at a time of writing data for the second bit line.
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