发明申请
- 专利标题: Plasma Processing Chamber for Bevel Edge Processing
- 专利标题(中): 斜边处理等离子处理室
-
申请号: US13082393申请日: 2011-04-07
-
公开(公告)号: US20110180212A1公开(公告)日: 2011-07-28
- 发明人: Andrew D. Bailey, III , Yunsang Kim
- 申请人: Andrew D. Bailey, III , Yunsang Kim
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065
摘要:
Chambers for processing a bevel edge of a substrate are provided. One such chamber includes a bottom electrode defined to support a substrate in the chamber. The bottom electrode has a bottom first level for supporting the substrate and a bottom second level near an outer edge of bottom electrode. The bottom second level is defined at a step below the bottom first level. Further included is a top electrode oriented above the bottom electrode. The top electrode having a top first level and a top second level, where the top first level is opposite the bottom first level and the top second level is opposite the bottom second level. The top second level is defined at a step above the top first level. A bottom ring mount oriented at the bottom second level is included. The bottom ring mount includes a first adjuster for moving a bottom permanent magnet toward and away from the top electrode. Further included is a top ring mount oriented at the top second level. The top ring mount includes a second adjuster for moving a top permanent magnet toward and away from the bottom electrode.
公开/授权文献
- US08440051B2 Plasma processing chamber for bevel edge processing 公开/授权日:2013-05-14
信息查询
IPC分类: