发明申请
US20110180880A1 DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS
有权
金属高K FET的双金属和双介电一体化
- 专利标题： DUAL METAL AND DUAL DIELECTRIC INTEGRATION FOR METAL HIGH-K FETS
- 专利标题（中）： 金属高K FET的双金属和双介电一体化
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申请号： US13080962申请日： 2011-04-06
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公开(公告)号： US20110180880A1公开(公告)日： 2011-07-28
- 发明人: Michael P. Chudzik , Wiliam K. Henson , Rashmi Jha , Yue Liang , Ravikumar Ramachandran , Richard S. Wise
- 申请人： Michael P. Chudzik , Wiliam K. Henson , Rashmi Jha , Yue Liang , Ravikumar Ramachandran , Richard S. Wise
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
The present invention, in one embodiment, provides a method of forming a semiconductor device that includes providing a substrate including a first conductivity type region and a second conductivity type region; forming a gate stack including a gate dielectric atop the first conductivity type region and the second conductivity type region of the substrate and a first metal gate conductor overlying the high-k gate dielectric; removing a portion of the first metal gate conductor that is present in the first conductivity type region to expose the gate dielectric present in the first conductivity type region; applying a nitrogen based plasma to the substrate, wherein the nitrogen based plasma nitrides the gate dielectric that is present in the first conductivity type region and nitrides the first metal gate conductor that is present in the second conductivity type region; and forming a second metal gate conductor overlying at least the gate dielectric that is present in the first conductivity type region.