发明申请
- 专利标题： NANOSTRUCTURED PHOTODIODE
- 专利标题（中）： 纳米结构光电子
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申请号： US13062018申请日： 2009-09-04
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公开(公告)号： US20110180894A1公开(公告)日： 2011-07-28
- 发明人: Lars Samuelson , Federico Capasso , Jonas Ohlsson
- 申请人： Lars Samuelson , Federico Capasso , Jonas Ohlsson
- 申请人地址： SE Lund
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 当前专利权人地址： SE Lund
- 优先权： SE0801906-9 20080904; SE0900498-7 20090415
- 国际申请： PCT/SE2009/050997 WO 20090904
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; B82Y15/00
摘要：
The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).
公开/授权文献
- US08692301B2 Nanostructured photodiode 公开/授权日：2014-04-08
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