A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. wherein, Ra1 represents a hydrogen atom, a halogen atom or a C1 to C3 saturated hydrocarbon group which may be substituted with a halogen atom; Ra2 represents a single bond or a divalent organic group; Ra3 represents a hydrogen atom, a C1 to C12 saturated hydrocarbon group which may be substituted with a hydroxy group etc., and Ra4 represent a C1 to C12 saturated hydrocarbon group.