发明申请
US20110186829A1 Surface Treated Substrates for Top Gate Organic Thin Film Transistors
审中-公开
顶栅有机薄膜晶体管表面处理基板
- 专利标题： Surface Treated Substrates for Top Gate Organic Thin Film Transistors
- 专利标题（中）： 顶栅有机薄膜晶体管表面处理基板
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申请号： US13056332申请日： 2009-08-07
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公开(公告)号： US20110186829A1公开(公告)日： 2011-08-04
- 发明人: Jeremy Burroughes , Julian Carter , Jonathan Halls , Thomas Kugler , Christopher Newsome
- 申请人： Jeremy Burroughes , Julian Carter , Jonathan Halls , Thomas Kugler , Christopher Newsome
- 申请人地址： GB Cambridgeshire
- 专利权人： Cambridge Display Technology Limited
- 当前专利权人： Cambridge Display Technology Limited
- 当前专利权人地址： GB Cambridgeshire
- 优先权： GB0814534.4 20080808
- 国际申请： PCT/GB2009/001941 WO 20090807
- 主分类号： H01L51/10
- IPC分类号： H01L51/10 ; H01L51/40
摘要：
A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel.
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