Provided is a thin film transistor that includes a gate electrode formed in one major plane of a substrate, a gate insulating film covering the gate electrode, a semiconductor film formed opposite to the gate electrode with the gate insulating film interposed and including a first amorphous region to serve as a source region, a second amorphous region to serve as a drain region, and a crystalline region to serve as a channel region disposed between the first amorphous region and the second amorphous region, and a source electrode and a drain electrode formed above the semiconductor film without direct contact with the crystalline region and electrically connected to the source region and the drain region, respectively.