发明申请
- 专利标题： High speed high power nitride semiconductor device
- 专利标题（中）： 高速高功率氮化物半导体器件
-
申请号： US13064748申请日： 2011-04-13
-
公开(公告)号： US20110186859A1公开(公告)日： 2011-08-04
- 发明人: Toshihiro Ohki
- 申请人： Toshihiro Ohki
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2006-353980 20061228
- 主分类号： H01L29/20
- IPC分类号： H01L29/20
摘要：
A nitride semiconductor device has: a substrate; a semiconductor lamination formed on the substrate, and including a channel layer of nitride semiconductor; source and drain electrodes formed on the semiconductor lamination in ohmic contact with the channel layer; an insulating layer formed on the semiconductor lamination, and having an opening in a gate electrode contact area, a total thickness portion having a flat surface and a total thickness in an area spaced apart from the opening, and a transient portion with monotonically changing thickness between the opening and the total thickness portion, a sidewall of the insulating layer facing the opening rising steeply to a partial thickness of the total thickness; and a T-shaped gate electrode contacting the semiconductor lamination layer in the opening and extending on the insulating film to portions with increased thickness thicker than the partial thickness.
公开/授权文献
- US08519441B2 High speed high power nitride semiconductor device 公开/授权日：2013-08-27
信息查询
IPC分类:
