发明申请
- 专利标题： Light Emitting Diode Having Improved Light Emission Efficiency and Method for Fabricating the Same
- 专利标题（中）： 具有改善的发光效率的发光二极管及其制造方法
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申请号： US12911070申请日： 2010-10-25
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公开(公告)号： US20110186863A1公开(公告)日： 2011-08-04
- 发明人: In Hwan Lee , Lee Woon Jang , Jin Woo Ju , Jung Hun Choi , Jae Woo Park
- 申请人： In Hwan Lee , Lee Woon Jang , Jin Woo Ju , Jung Hun Choi , Jae Woo Park
- 申请人地址： KR Chonbuk
- 专利权人： Industrial Cooperation Foundation Chonbuk National University
- 当前专利权人： Industrial Cooperation Foundation Chonbuk National University
- 当前专利权人地址： KR Chonbuk
- 优先权： KR1020100009468 20100202
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
Provided is a light emitting diode (LED) having improved light emission efficiency, which can effectively overcome a technical limit of the related art by implementing a surface plasma resonance effect as well as reducing a layer defect such as threading dislocations in an LED structure.
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