发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH GATE STACK STRUCTURE
- 专利标题（中）： 具有栅格堆叠结构的半导体器件
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申请号： US13043385申请日： 2011-03-08
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公开(公告)号： US20110186920A1公开(公告)日： 2011-08-04
- 发明人: Kwan-Yong LIM , Hong-Seon Yang , Heung-Jae Cho , Tae-Kyung Kim , Yong-Soo Kim , Min-Gyu Sung
- 申请人： Kwan-Yong LIM , Hong-Seon Yang , Heung-Jae Cho , Tae-Kyung Kim , Yong-Soo Kim , Min-Gyu Sung
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2006-0134326 20061227; KR10-2006-0041288 20070427
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
公开/授权文献
- US08441079B2 Semiconductor device with gate stack structure 公开/授权日：2013-05-14
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