发明申请
- 专利标题: EMITTER-FOLLOWER TYPE BIAS CIRCUIT
- 专利标题(中): 发射器 - 型号偏置电路
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申请号: US12875168申请日: 2010-09-03
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公开(公告)号: US20110187459A1公开(公告)日: 2011-08-04
- 发明人: Takayuki Matsuzuka , Kazuya Yamamoto , Tomoyuki Asada
- 申请人: Takayuki Matsuzuka , Kazuya Yamamoto , Tomoyuki Asada
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-021073 20100202
- 主分类号: H03F3/16
- IPC分类号: H03F3/16
摘要:
An emitter-follower bias circuit supplying a bias voltage to the base of an amplification transistor includes: a depletion mode FET boosting a reference voltage; and an emitter-follower circuit generating the bias voltage in response to the reference voltage boosted by the depletion mode FET.
公开/授权文献
- US08138836B2 Emitter-follower type bias circuit 公开/授权日:2012-03-20