发明申请
- 专利标题: RESIST PROCESSING METHOD
- 专利标题(中): 电阻加工方法
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申请号: US13062180申请日: 2009-09-01
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公开(公告)号: US20110189618A1公开(公告)日: 2011-08-04
- 发明人: Mitsuhiro Hata , Nobuo Ando , Satoshi Yamamoto , Junji Shigematsu , Akira Kamabuchi
- 申请人: Mitsuhiro Hata , Nobuo Ando , Satoshi Yamamoto , Junji Shigematsu , Akira Kamabuchi
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-227817 20080905
- 国际申请: PCT/JP2009/065272 WO 20090901
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.