发明申请
US20110193094A1 GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY
审中-公开
平面减少偏差密度的增长通过液相蒸发相外延的M-PLANE GALLIUM NITRIDE
- 专利标题： GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY
- 专利标题（中）： 平面减少偏差密度的增长通过液相蒸发相外延的M-PLANE GALLIUM NITRIDE
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申请号： US13086961申请日： 2011-04-14
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公开(公告)号： US20110193094A1公开(公告)日： 2011-08-11
- 发明人: Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
- 申请人： Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
- 申请人地址： US CA Oakland JP Kawaguchi City
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人地址： US CA Oakland JP Kawaguchi City
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/20
摘要：
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
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