Invention Application
- Patent Title: SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US12911772Application Date: 2010-10-26
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Publication No.: US20110193126A1Publication Date: 2011-08-11
- Inventor: Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
- Applicant: Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2010-026592 20100209
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L21/283

Abstract:
A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion.
Information query
IPC分类: