发明申请
- 专利标题： ELECTRONIC DEVICE INCLUDING A BURIED INSULATING LAYER AND A VERTICAL CONDUCTIVE STRUCTURE EXTENDING THERETHROUGH AND A PROCESS OF FORMING THE SAME
- 专利标题（中）： 包括绝缘绝缘层的电子器件和通过其延伸的垂直导电结构及其形成方法
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申请号： US12702055申请日： 2010-02-08
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公开(公告)号： US20110193160A1公开(公告)日： 2011-08-11
- 发明人: Gary H. Loechelt , Gordon M. Grivna , Peter J. Zdebel
- 申请人： Gary H. Loechelt , Gordon M. Grivna , Peter J. Zdebel
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/8234
摘要：
An electronic device can include a buried conductive region, a buried insulating layer over the buried conductive region, and a semiconductor layer disposed over the buried insulating layer, wherein the semiconductor layer has a primary surface and an opposing surface, and the buried conductive region is disposed closer to the opposing surface than to the primary surface. The electronic device can also include a current-carrying electrode of a first transistor, wherein the current carrying electrode is disposed along the primary surface and spaced apart from the buried conductive layer. The electronic device can also include a vertical conductive structure extending through the buried insulating layer, wherein the vertical conductive structure is electrically connected to the current-carrying electrode and the buried conductive region.
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