发明申请
US20110193586A1 Alternating Current (AC) Stress Test Circuit, Method for Evaluating AC Stress Induced Hot Carrier Injection (HCI) Degradation, and Test Structure for HCI Degradation Evaluation
有权
交流电压（AC）应力测试电路，评估交流应力诱导热载体注入（HCI）降解的方法和HCI降解评估的测试结构
- 专利标题： Alternating Current (AC) Stress Test Circuit, Method for Evaluating AC Stress Induced Hot Carrier Injection (HCI) Degradation, and Test Structure for HCI Degradation Evaluation
- 专利标题（中）： 交流电压（AC）应力测试电路，评估交流应力诱导热载体注入（HCI）降解的方法和HCI降解评估的测试结构
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申请号： US12703949申请日： 2010-02-11
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公开(公告)号： US20110193586A1公开(公告)日： 2011-08-11
- 发明人: Sung-Nien Kuo , Yuan-Yu Hsieh , Wen-Hsiung Ko , Jih-San Lee , Kuei-Chi Juan , Kuan-Cheng Su
- 申请人： Sung-Nien Kuo , Yuan-Yu Hsieh , Wen-Hsiung Ko , Jih-San Lee , Kuei-Chi Juan , Kuan-Cheng Su
- 专利权人： United Microelectronics Corporation
- 当前专利权人： United Microelectronics Corporation
- 主分类号： G01R31/26
- IPC分类号： G01R31/26 ; G01R31/02
摘要：
An AC stress test circuit for HCI degradation evaluation in semiconductor devices includes a ring oscillator circuit, first and second pads, and first and second isolating switches. The ring oscillator circuit has a plurality of stages connected in series to form a loop. Each of the stages comprises a first node and a second node. The first and second isolating switches respectively connect the first and second pads to the first and second nodes of a designated stage and both are switched-off during ring oscillator stressing of the designated stage. The present invention also provides a method of evaluating AC stress induced HCI degradation, and a test structure.