发明申请
US20110193940A1 3D CMOS Image Sensors, Sensor Systems Including the Same 有权
3D CMOS图像传感器,包括它的传感器系统

3D CMOS Image Sensors, Sensor Systems Including the Same
摘要:
A three-dimensional (3D) CMOS image sensor (CIS) that sufficiently absorbs incident infrared-rays (IRs) and includes an infrared-ray (IR) receiving unit formed in a thin epitaxial film, thereby being easily manufactured using a conventional CIS process, a sensor system including the 3D CIS, and a method of manufacturing the 3D CIS, the 3D CIS including an IR receiving part absorbing IRs incident thereto by repetitive reflection to produce electron-hole pairs (EHPs); and an electrode part formed on the IR receiving part and collecting electrons produced by applying a predetermined voltage thereto.
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