发明申请
- 专利标题: METHODS OF FORMING AND OPERATING SEMICONDUCTOR DEVICE
- 专利标题(中): 形成和操作半导体器件的方法
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申请号: US13087643申请日: 2011-04-15
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公开(公告)号: US20110194356A1公开(公告)日: 2011-08-11
- 发明人: Wook-Hyun KWON , Byung-Gook PARK , Yun-Heub SONG , Yoon KIM
- 申请人: Wook-Hyun KWON , Byung-Gook PARK , Yun-Heub SONG , Yoon KIM
- 申请人地址: KR Suwon-si KR Seoul
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.,SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.,SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
- 当前专利权人地址: KR Suwon-si KR Seoul
- 优先权: KR10-2008-0065120 20080704
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; H01L21/336
摘要:
Provided are a semiconductor device and a methods of forming and operating the semiconductor device. The semiconductor device may include active pillars extending from a semiconductor substrate and disposed two dimensionally disposed on the semiconductor substrate, upper interconnections connecting the active pillars along one direction, lower interconnections crossing the upper interconnections and disposed between the active pillars, word lines crossing the upper interconnections and disposed between the active pillars, and data storage patterns disposed between the word lines and the active pillars.
公开/授权文献
- US08354708B2 Methods of forming and operating semiconductor device 公开/授权日:2013-01-15
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