发明申请
- 专利标题： METHODS FOR FORMING BARRIER REGIONS WITHIN REGIONS OF INSULATING MATERIAL RESULTING IN OUTGASSING PATHS FROM THE INSULATING MATERIAL AND RELATED DEVICES
- 专利标题（中）： 在绝缘材料和相关设备中在绝缘材料上形成的绝缘材料区域中形成障碍区域的方法
-
申请号： US12707150申请日： 2010-02-17
-
公开(公告)号： US20110198694A1公开(公告)日： 2011-08-18
- 发明人: Man Fai NG , Bin YANG
- 申请人： Man Fai NG , Bin YANG
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/762
摘要：
Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.
公开/授权文献
信息查询
IPC分类:
