发明申请
- 专利标题: TITANIUM-BASED HIGH-K DIELECTRIC FILMS
- 专利标题(中): 基于钛的高K电介质膜
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申请号: US13100538申请日: 2011-05-04
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公开(公告)号: US20110203085A1公开(公告)日: 2011-08-25
- 发明人: Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
- 申请人: Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
- 申请人地址: US CA San Jose
- 专利权人: INTERMOLECULAR, INC.
- 当前专利权人: INTERMOLECULAR, INC.
- 当前专利权人地址: US CA San Jose
- 主分类号: H01G7/00
- IPC分类号: H01G7/00
摘要:
This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.
公开/授权文献
- US08551851B2 Titanium-based high-K dielectric films 公开/授权日:2013-10-08