发明申请
US20110204470A1 METHOD, SYSTEM, AND APPARATUS FOR ADJUSTING LOCAL AND GLOBAL PATTERN DENSITY OF AN INTEGRATED CIRCUIT DESIGN
有权
用于调整集成电路设计的局部和全局模式密度的方法,系统和装置
- 专利标题: METHOD, SYSTEM, AND APPARATUS FOR ADJUSTING LOCAL AND GLOBAL PATTERN DENSITY OF AN INTEGRATED CIRCUIT DESIGN
- 专利标题(中): 用于调整集成电路设计的局部和全局模式密度的方法,系统和装置
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申请号: US12712665申请日: 2010-02-25
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公开(公告)号: US20110204470A1公开(公告)日: 2011-08-25
- 发明人: Ying-Chou Cheng , Cheng-Lung Tsai , Tsong-Hua Ou , Cheng Kun Tsai , Ru-Gun Liu , Wen-Chun Huang
- 申请人: Ying-Chou Cheng , Cheng-Lung Tsai , Tsong-Hua Ou , Cheng Kun Tsai , Ru-Gun Liu , Wen-Chun Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDOCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDOCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L23/544
- IPC分类号: H01L23/544 ; G06F17/50
摘要:
An integrated circuit (IC) design method providing a circuit design layout having a plurality of functional blocks disposed a distance away from each other; identifying a local pattern density to an approximate dummy region, on the circuit design layout, within a predefined distance to one of the functional blocks; performing a local dummy insertion to the approximate dummy region according to the local pattern density; repeating the identifying and performing to at least some other of the functional blocks; and implementing a global dummy insertion to a non-local dummy region according to a global pattern density.
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