发明申请
- 专利标题: Method For Manufacturing A Semiconductor Structure
- 专利标题(中): 制造半导体结构的方法
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申请号: US12899530申请日: 2010-10-06
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公开(公告)号: US20110207262A1公开(公告)日: 2011-08-25
- 发明人: Geng-Shin Shen
- 申请人: Geng-Shin Shen
- 申请人地址: TW Hsinchu
- 专利权人: Chipmos Technologies Inc.
- 当前专利权人: Chipmos Technologies Inc.
- 当前专利权人地址: TW Hsinchu
- 优先权: TW099104975 20100222
- 主分类号: H01L21/603
- IPC分类号: H01L21/603
摘要:
The present invention provides a method for manufacturing a semiconductor structure, comprising the following steps of: forming a substrate having a package array, wherein the package array has a plurality of contact pads and a protection layer, and the plurality of contact pads are exposed to the outer side of the protection layer; forming a thermosetting non-conductive layer covering the substrate; partially solidifying the thermosetting non-conductive layer to form a semi-solid non-conductive layer; connecting chips to the package array on the substrate, wherein each of the chips has an active surface, a plurality of chip pads and a plurality of composite bumps, the chip pads are formed on the active surface, and the composite bumps are formed on the chip pads so that the composite bumps electrically connect to each of the contact pads; pressing and heating the chips and the substrate so that the semi-solid non-conductive layer adheres with the chips and the substrate; pre-heating an encapsulant preformed on a metal layer; covering the chips on the substrate with the encapsulant; and solidifying the encapsulant to completely cover the chips on the substrate. The present invention can reduce use of gold to lower the manufacturing cost and can also improve the heat conduction efficiency of the semiconductor structure to enhance operational stability of the chips.
公开/授权文献
- US08058109B2 Method for manufacturing a semiconductor structure 公开/授权日:2011-11-15
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