发明申请
- 专利标题： SOLID-STATE MEMORY MANUFACTURING METHOD
- 专利标题（中）： 固态存储器制造方法
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申请号： US12998482申请日： 2009-09-28
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公开(公告)号： US20110207284A1公开(公告)日： 2011-08-25
- 发明人: Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
- 申请人： Junji Tominaga , Takayuki Shima , Alexander Kolobov , Paul Fons , Robert Simpson , Reiko Kondo
- 申请人地址： JP Chiyoda-ku
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2008-280134 20081030
- 国际申请： PCT/JP2009/004938 WO 20090928
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A method of at least one embodiment of the present invention of manufacturing a solid-state memory is a method of manufacturing a solid-state memory, the solid-state memory including a recording film whose electric characteristics are varied by phase transformation, the method including: forming the recording film by forming a laminate of two or more layers so that a superlattice structure is provided, each of the layers having a parent phase which shows solid-to-solid phase-transformation, the recording film being formed at a temperature not lower than a temperature highest among crystallization temperatures of the parent phases. It is thus possible to manufacture a solid-state memory which requires lower current for recording and erasing data and has a greater rewriting cycle number.
公开/授权文献
- US08530314B2 Solid-state memory manufacturing method 公开/授权日：2013-09-10
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