发明申请
- 专利标题: FIN-JFET
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申请号: US13086246申请日: 2011-04-13
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公开(公告)号: US20110210379A1公开(公告)日: 2011-09-01
- 发明人: Badih El-Kareh , Leonard Forbes
- 申请人: Badih El-Kareh , Leonard Forbes
- 申请人地址: US ID Boise
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID Boise
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/80
摘要:
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.
公开/授权文献
- US08502280B2 Fin-JFET 公开/授权日:2013-08-06