发明申请
US20110210389A1 Transistor Comprising a Buried High-K Metal Gate Electrode Structure
审中-公开
包含高K金属栅电极结构的晶体管
- 专利标题： Transistor Comprising a Buried High-K Metal Gate Electrode Structure
- 专利标题（中）： 包含高K金属栅电极结构的晶体管
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申请号： US13006048申请日： 2011-01-13
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公开(公告)号： US20110210389A1公开(公告)日： 2011-09-01
- 发明人: Uwe Griebenow , Jan Hoentschel , Thilo Scheiper , Sven Beyer
- 申请人： Uwe Griebenow , Jan Hoentschel , Thilo Scheiper , Sven Beyer
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010002412.0 20100226
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A buried gate electrode structures may be formed in the active regions of sophisticated transistors by providing a recess in the active region and incorporating appropriate gate materials, such as a high-k dielectric material and a metal-containing electrode material. Due to the recessed configuration, the channel length and thus the channel controllability may be increased, without increasing the overall lateral dimensions of the transistor structure.
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