发明申请
- 专利标题： TRANSISTORS COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTURES AND ADAPTED CHANNEL SEMICONDUCTOR MATERIALS
- 专利标题（中）： 包含高K金属栅极电极结构和适配通道半导体材料的晶体管
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申请号： US12917700申请日： 2010-11-02
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公开(公告)号： US20110210398A1公开(公告)日： 2011-09-01
- 发明人: Sven Beyer , Jan Hoentschel , Thilo Scheiper , Uwe Griebenow
- 申请人： Sven Beyer , Jan Hoentschel , Thilo Scheiper , Uwe Griebenow
- 优先权： DE102010002450.3 20100226
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
In sophisticated semiconductor devices, a replacement gate approach may be applied, in which a channel semiconductor material may be provided through the gate opening prior to forming the gate dielectric material and the electrode metal. In this manner, specific channel materials may be provided in a late manufacturing stage for different transistor types, thereby providing superior transistor performance and superior flexibility in adjusting the electronic characteristics of the transistors.
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