发明申请
US20110213172A1 Metallocenyl dendrimer, organic memory device using the same and fabrication method of the organic memory device
审中-公开
金属茂树枝状聚合物，使用其的有机存储器件和有机存储器件的制造方法
- 专利标题： Metallocenyl dendrimer, organic memory device using the same and fabrication method of the organic memory device
- 专利标题（中）： 金属茂树枝状聚合物，使用其的有机存储器件和有机存储器件的制造方法
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申请号： US13064491申请日： 2011-03-29
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公开(公告)号： US20110213172A1公开(公告)日： 2011-09-01
- 发明人: Tae Lim Choi , Kwang Hee Lee , Sang Kyun Lee
- 申请人： Tae Lim Choi , Kwang Hee Lee , Sang Kyun Lee
- 优先权： KR10-2006-0111785 20061113
- 主分类号： C07F15/02
- IPC分类号： C07F15/02
摘要：
Disclosed are a metallocenyl dendrimer, an organic memory device using the metallocenyl dendrimer and a method for fabricating the organic memory device. The metallocenyl dendrimer may be composed of a dendrimer and metallocenes as redox species linked to the dendrimer. The organic memory device may possess the advantages of shorter switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.
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