发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12673550申请日: 2008-08-14
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公开(公告)号: US20110215384A1公开(公告)日: 2011-09-08
- 发明人: Tadahiro Ohmi , Takaaki Matsuoka , Atsutoshi Inokuchi , Kohei Watanuki , Tadashi Koike , Tatsuhiko Adachi
- 申请人: Tadahiro Ohmi , Takaaki Matsuoka , Atsutoshi Inokuchi , Kohei Watanuki , Tadashi Koike , Tatsuhiko Adachi
- 申请人地址: JP Sendai-shi, Miyagi JP Tokyo JP Yamaguchi JP Tokyo
- 专利权人: National University Corporation Tohoku University,Tokyo Electron Limited,Ube Industries, Ltd.,Ube-Nitto Kasei Co., Ltd.
- 当前专利权人: National University Corporation Tohoku University,Tokyo Electron Limited,Ube Industries, Ltd.,Ube-Nitto Kasei Co., Ltd.
- 当前专利权人地址: JP Sendai-shi, Miyagi JP Tokyo JP Yamaguchi JP Tokyo
- 优先权: JP2007-212505 20070816
- 国际申请: PCT/JP2008/064573 WO 20080814
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/06 ; H01L21/762 ; H01L21/336
摘要:
In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦x≦1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.