发明申请
- 专利标题： NAND FLASH MEMORY
- 专利标题（中）： NAND闪存
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申请号： US13108641申请日： 2011-05-16
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公开(公告)号： US20110216593A1公开(公告)日： 2011-09-08
- 发明人: KIYOFUMI SAKURAI , Takuya Futatsuyama
- 申请人： KIYOFUMI SAKURAI , Takuya Futatsuyama
- 优先权： JP2008-184056 20080715
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method of controlling a programming of a flash memory with memory blocks. The method includes checking whether a selected block among the memory blocks belongs to a first group or a second group. The method further includes executing the programming from a least bit address when the selected block belongs to the first group. The method also includes executing the programming from a most bit address when the selected block belongs to the second group.
公开/授权文献
- US08233325B2 NAND flash memory 公开/授权日：2012-07-31
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