发明申请
- 专利标题： METHOD OF SEPARATING SEMICONDUCTOR DIES
- 专利标题（中）： 分离半导体器件的方法
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申请号： US13109687申请日： 2011-05-17
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公开(公告)号： US20110217799A1公开(公告)日： 2011-09-08
- 发明人: Chen-Fu Chu , Trung Tri Doan , Hao-Chun Cheng , Feng-Hsu Fan , Fu-Hsien Wang
- 申请人： Chen-Fu Chu , Trung Tri Doan , Hao-Chun Cheng , Feng-Hsu Fan , Fu-Hsien Wang
- 主分类号： H01L21/786
- IPC分类号： H01L21/786
摘要：
A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.
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