发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING INSULATED GATE SEMICONDUCTOR ELEMENT, AND INSULATED GATE BIPOLAR TRANSISTOR
- 专利标题（中）： 具有绝缘栅半导体元件和绝缘栅双极晶体管的半导体器件
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申请号： US13115137申请日： 2011-05-25
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公开(公告)号： US20110220962A1公开(公告)日： 2011-09-15
- 发明人: Masaki Koyama , Yoshifumi Okabe , Makoto Asai , Takeshi Fujii , Koh Yoshikawa
- 申请人： Masaki Koyama , Yoshifumi Okabe , Makoto Asai , Takeshi Fujii , Koh Yoshikawa
- 申请人地址： JP Kariya-city JP Tokyo
- 专利权人： DENSO CORPORATION,Fuji Electric Device Technology Co., Ltd.
- 当前专利权人： DENSO CORPORATION,Fuji Electric Device Technology Co., Ltd.
- 当前专利权人地址： JP Kariya-city JP Tokyo
- 优先权： JP2008-015760 20080128; JP2008-271135 20081021; JP2008-287036 20081107
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.