发明申请
- 专利标题： Memristor Devices Configured to Control Bubble Formation
- 专利标题（中）： 配置用于控制气泡形成的忆阻器装置
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申请号： US13130799申请日： 2009-01-06
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公开(公告)号： US20110227031A1公开(公告)日： 2011-09-22
- 发明人: Zhiyong Li , Alexandre M. Bratkovski , Jianhua Yang
- 申请人： Zhiyong Li , Alexandre M. Bratkovski , Jianhua Yang
- 国际申请： PCT/US2009/000070 WO 20090106
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24
摘要：
Various embodiments of the present invention are direct to nanoscale, reconfigurable, two-terminal memristor devices. In one aspect, a device (400) includes an active region (402) for controlling the flow of charge carriers between a first electrode (104) and a second electrode (106). The active region is disposed between the first electrode and the second electrode and includes a storage material. Excess mobile oxygen ions formed within the active region are stored in the storage material by applying a first voltage.
公开/授权文献
- US09000411B2 Memristor devices configured to control bubble formation 公开/授权日：2015-04-07
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