发明申请
- 专利标题： SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER
- 专利标题（中）： 半导体发光装置，散热器，制造半导体发光装置的方法及制造方法
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申请号： US12876685申请日： 2010-09-07
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公开(公告)号： US20110227033A1公开(公告)日： 2011-09-22
- 发明人: Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
- 申请人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-061683 20100317
- 主分类号： H01L33/04
- IPC分类号： H01L33/04
摘要：
According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0