发明申请
- 专利标题: SEMICONDUCTOR SUBSTRATE CLEANING METHOD
- 专利标题(中): 半导体衬底清洗方法
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申请号: US12841217申请日: 2010-07-22
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公开(公告)号: US20110230054A1公开(公告)日: 2011-09-22
- 发明人: Hiroshi TOMITA , Hisashi Okuchi , Minato Inukai , Hidekazu Hayashi , Yasuhito Yoshimizu
- 申请人: Hiroshi TOMITA , Hisashi Okuchi , Minato Inukai , Hidekazu Hayashi , Yasuhito Yoshimizu
- 优先权: JP2010-59006 20100316
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; B08B3/08 ; B08B3/12
摘要:
In one embodiment, a semiconductor substrate cleaning method is disclosed. The method can clean a semiconductor substrate by using a chemical of 80° C. or above. The method can rinse the semiconductor substrate by using pure water of 40° C. or above after the cleaning of the semiconductor substrate. The method can then rinse the semiconductor substrate by using pure water of 30° C. or below. In addition, the method can dry the semiconductor substrate.