发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12886135申请日： 2010-09-20
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公开(公告)号： US20110233646A1公开(公告)日： 2011-09-29
- 发明人: Ichiro MIZUSHIMA , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
- 申请人： Ichiro MIZUSHIMA , Shinji Mori , Yoshiaki Fukuzumi , Fumiki Aiso
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-066706 20100323
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.
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