发明申请
US20110235428A1 COMPENSATION OF NON-VOLATILE MEMORY CHIP NON-IDEALITIES BY PROGRAM PULSE ADJUSTMENT
有权
通过程序脉冲调整补偿非易失性内存芯片非理想
- 专利标题： COMPENSATION OF NON-VOLATILE MEMORY CHIP NON-IDEALITIES BY PROGRAM PULSE ADJUSTMENT
- 专利标题（中）： 通过程序脉冲调整补偿非易失性内存芯片非理想
-
申请号： US13151938申请日： 2011-06-02
-
公开(公告)号： US20110235428A1公开(公告)日： 2011-09-29
- 发明人: Nima Mokhlesi , Dengtao Zhao , Henry Chin , Tapan Samaddar
- 申请人： Nima Mokhlesi , Dengtao Zhao , Henry Chin , Tapan Samaddar
- 主分类号： G11C16/10
- IPC分类号： G11C16/10
摘要：
To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements.