发明申请
US20110235664A1 OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
光电子半导体芯片和生产光电半导体芯片的方法

  • 专利标题: OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
  • 专利标题(中): 光电子半导体芯片和生产光电半导体芯片的方法
  • 申请号: US13123779
    申请日: 2009-10-12
  • 公开(公告)号: US20110235664A1
    公开(公告)日: 2011-09-29
  • 发明人: Stefan IllekUwe Strauss
  • 申请人: Stefan IllekUwe Strauss
  • 申请人地址: DE Regensburg
  • 专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
  • 当前专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
  • 当前专利权人地址: DE Regensburg
  • 优先权: DE102008054217.2 20081031
  • 国际申请: PCT/DE09/01416 WO 20091012
  • 主分类号: H01S5/20
  • IPC分类号: H01S5/20 H01L33/58
OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
摘要:
An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.
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