发明申请
US20110235678A1 LEADLESS MEDIA PROTECTED FAST RESPONSE RTD SENSOR AND METHOD FOR MAKING THE SAME
失效
无铅介质保护快速反应式RTD传感器及其制造方法
- 专利标题: LEADLESS MEDIA PROTECTED FAST RESPONSE RTD SENSOR AND METHOD FOR MAKING THE SAME
- 专利标题(中): 无铅介质保护快速反应式RTD传感器及其制造方法
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申请号: US12731427申请日: 2010-03-25
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公开(公告)号: US20110235678A1公开(公告)日: 2011-09-29
- 发明人: Anthony D. Kurtz , Nora Kurtz , Alex Ned , Vikram Patil , Joseph VanDeWeert
- 申请人: Anthony D. Kurtz , Nora Kurtz , Alex Ned , Vikram Patil , Joseph VanDeWeert
- 申请人地址: US NJ Leonia
- 专利权人: Kulite Semiconductor Products, Inc.
- 当前专利权人: Kulite Semiconductor Products, Inc.
- 当前专利权人地址: US NJ Leonia
- 主分类号: G01K7/18
- IPC分类号: G01K7/18 ; H01L21/441
摘要:
The RTD device of the present invention is comprised of a semiconductor substrate and a substantially thin conductive metal layer disposed upon the semiconductor substrate, wherein the conductive metal has a substantially linear temperature-resistance relationship. The conductive layer is etched into a convoluted RTD pattern, which consequently increases the overall resistance and minimizes the overall mass of the RTD assembly. A contact glass cover and a conductive metal-glass frit are placed over the RTD assembly to hermetically seal the RTD. The resultant structure can be “upside-down” mounted onto a header or a flat shim so that the bottom surface of the semiconductor substrate is exposed to the external environment, thus shielding the RTD from external forces. The resultant structure is a low mass, highly conductive, leadless, and hermetically sealed RTD that accurately measures the temperature of liquids and gases and maintains fast response time in high temperatures and harsh environments.