发明申请
- 专利标题： ALTERNATING-DOPING PROFILE FOR SOURCE/DRAIN OF A FET
- 专利标题（中）： FET的源/漏极的替代配置
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申请号： US13155957申请日： 2011-06-08
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公开(公告)号： US20110237041A1公开(公告)日： 2011-09-29
- 发明人: Chen-Liang Chu , Chun-Ting Liao , Fei-Yuh Chen , Tsung-Yi Huang
- 申请人： Chen-Liang Chu , Chun-Ting Liao , Fei-Yuh Chen , Tsung-Yi Huang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the semiconductor substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.
公开/授权文献
- US08377787B2 Alternating-doping profile for source/drain of a FET 公开/授权日：2013-02-19
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