发明申请
- 专利标题: Methods of Manufacturing Stacked Semiconductor Devices
- 专利标题(中): 堆叠半导体器件制造方法
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申请号: US13053291申请日: 2011-03-22
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公开(公告)号: US20110237055A1公开(公告)日: 2011-09-29
- 发明人: Yong-hoon Son , Si-Young Choi , Myoung-Bum Lee , Ki-Hyun Hwang , Seung-Jae Baik , Jeong Hee Han
- 申请人: Yong-hoon Son , Si-Young Choi , Myoung-Bum Lee , Ki-Hyun Hwang , Seung-Jae Baik , Jeong Hee Han
- 优先权: KR10-2010-0025873 20100323
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A stacked semiconductor device that is reliable by forming an insulating layer on a lower memory layer and by forming a single crystalline semiconductor in portions of the insulating layer. A method of manufacturing the stacked semiconductor device, including: providing a lower memory layer including a plurality of lower memory structures; forming an insulating layer on the lower memory layer; forming trenches by removing portions of the insulating layer; forming a preparatory semiconductor layer for filling the trenches; and forming a single crystalline semiconductor layer by phase-changing the preparatory semiconductor layer.