发明申请
US20110240954A1 SILICON NANOWIRE COMPRISING HIGH DENSITY METAL NANOCLUSTERS AND METHOD OF PREPARING THE SAME
有权
包含高密度金属纳米粒子的硅纳米微粒及其制备方法
- 专利标题： SILICON NANOWIRE COMPRISING HIGH DENSITY METAL NANOCLUSTERS AND METHOD OF PREPARING THE SAME
- 专利标题（中）： 包含高密度金属纳米粒子的硅纳米微粒及其制备方法
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申请号： US13076957申请日： 2011-03-31
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公开(公告)号： US20110240954A1公开(公告)日： 2011-10-06
- 发明人: Gyeong-su PARK , In-yong SONG , Sung HEO , Dong-wook KWAK , Hoon Young CHO , Han-su KIM , Jae-man CHOI , Moon-seok KWON
- 申请人： Gyeong-su PARK , In-yong SONG , Sung HEO , Dong-wook KWAK , Hoon Young CHO , Han-su KIM , Jae-man CHOI , Moon-seok KWON
- 申请人地址： KR Suwon-si KR Seoul
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.,DONGGUK UNIVERSITY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.,DONGGUK UNIVERSITY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人地址： KR Suwon-si KR Seoul
- 优先权： KR10-2010-0030504 20100402
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/20 ; B82Y99/00 ; B82Y40/00
摘要：
A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.
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