发明申请
- 专利标题： METHODS FOR OPERATING MEMORY ELEMENTS
- 专利标题（中）： 操作记忆元素的方法
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申请号： US13159288申请日： 2011-06-13
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公开(公告)号： US20110242878A1公开(公告)日： 2011-10-06
- 发明人: Jennifer Taylor , John D. Porter
- 申请人： Jennifer Taylor , John D. Porter
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INS.
- 当前专利权人： MICRON TECHNOLOGY, INS.
- 当前专利权人地址： US ID Boise
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/12
摘要：
Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
公开/授权文献
- US08363500B2 Methods for operating memory elements 公开/授权日：2013-01-29