发明申请
- 专利标题： METHOD OF CRYSTALIZING AMORPHOUS SILICON LAYER, METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME, AND THIN FILM TRANSISTOR USING THE MANUFACTURING METHOD
- 专利标题（中）： 非晶硅层的晶体化方法，使用其制造薄膜晶体管的方法和使用制造方法的薄膜晶体管
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申请号： US12975809申请日： 2010-12-22
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公开(公告)号： US20110248277A1公开(公告)日： 2011-10-13
- 发明人: Dong-Hyun LEE , Ki-Yong LEE , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Kil-Won Lee , Yun-Mo Chung , Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
- 申请人： Dong-Hyun LEE , Ki-Yong LEE , Jin-Wook Seo , Min-Jae Jeong , Yong-Duck Son , Byung-Soo So , Seung-Kyu Park , Kil-Won Lee , Yun-Mo Chung , Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jae-Wan Jung
- 申请人地址： KR Yongin-City
- 专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人： Samsung Mobile Display Co., Ltd.
- 当前专利权人地址： KR Yongin-City
- 优先权： KR10-2010-0032337 20100408
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/20 ; H01L21/84
摘要：
A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.