发明申请
- 专利标题： Self-Aligned Contacts for Field Effect Transistor Devices
- 专利标题（中）： 场效应晶体管器件的自对准触点
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申请号： US12757201申请日： 2010-04-09
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公开(公告)号： US20110248321A1公开(公告)日： 2011-10-13
- 发明人: Dechao Guo , Wilfried E. Haensch , Xinhui Wang , Keith Kwong Hon Wong
- 申请人： Dechao Guo , Wilfried E. Haensch , Xinhui Wang , Keith Kwong Hon Wong
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region.
公开/授权文献
- US08367508B2 Self-aligned contacts for field effect transistor devices 公开/授权日：2013-02-05
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