发明申请
- 专利标题： SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
- 专利标题（中）： 固态成像装置，制造固态成像装置的方法和电子装置
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申请号： US13078569申请日： 2011-04-01
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公开(公告)号： US20110248371A1公开(公告)日： 2011-10-13
- 发明人: Yusuke Matsumura , Takashi Machida
- 申请人： Yusuke Matsumura , Takashi Machida
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-089606 20100408
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/18
摘要：
Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type well to a predetermined depth of the surface side under at least one portion of the charge retaining area and the charge voltage conversion area.
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