发明申请
- 专利标题： METHOD FOR SELECTIVELY FORMING SYMMETRICAL OR ASYMMETRICAL FEATURES USING A SYMMETRICAL PHOTOMASK DURING FABRICATION OF A SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEMS INCLUDING THE SEMICONDUCTOR DEVICE
- 专利标题（中）： 在半导体器件制造过程中使用对称光电子元件和包括半导体器件的电子系统选择对称或非对称特征的方法
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申请号： US13162889申请日： 2011-06-17
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公开(公告)号： US20110248385A1公开(公告)日： 2011-10-13
- 发明人: Hongbin Zhu , Jeremy Madsen
- 申请人： Hongbin Zhu , Jeremy Madsen
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L29/06
摘要：
A method for patterning a material during fabrication of a semiconductor device provides for the selective formation of either asymmetrical features or symmetrical features using a symmetrical photomask, depending on which process flow is chosen. The resulting features which are fabricated use spacers formed around a patterned material. If one particular etch is used to remove a base material, symmetrical features result. If two particular etches are used to remove the base material, asymmetrical features remain.
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