发明申请
- 专利标题： Nanowire Circuits in Matched Devices
- 专利标题（中）： 匹配器件中的纳米线电路
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申请号： US12758939申请日： 2010-04-13
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公开(公告)号： US20110249489A1公开(公告)日： 2011-10-13
- 发明人: Sarunya Bangsaruntip , Guy Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人： Sarunya Bangsaruntip , Guy Cohen , Amlan Majumdar , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L21/8238 ; H01L21/336 ; H03K19/20
摘要：
An inverter device includes a first nanowire connected to a voltage source node and a ground node, a first p-type field effect transistor (pFET) device having a gate disposed on the first nanowire, and a first n-type field effect transistor (nFET) device having a gate disposed on the first nanowire.
公开/授权文献
- US08324940B2 Nanowire circuits in matched devices 公开/授权日：2012-12-04