发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13012840申请日： 2011-01-25
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公开(公告)号： US20110249694A1公开(公告)日： 2011-10-13
- 发明人: Harumi Nishiguchi , Misao Hironaka , Kyosuke Kuramoto , Masatsugu Kusunoki , Yosuke Suzuki
- 申请人： Harumi Nishiguchi , Misao Hironaka , Kyosuke Kuramoto , Masatsugu Kusunoki , Yosuke Suzuki
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-088912 20100407
- 主分类号： H01S5/32
- IPC分类号： H01S5/32 ; H01L33/48
摘要：
A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.
公开/授权文献
- US08625646B2 Semiconductor device 公开/授权日：2014-01-07
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