发明申请
- 专利标题: AUXILIARY PARITY BITS FOR DATA WRITTEN IN MULTI-LEVEL CELLS
- 专利标题(中): 用于在多级电池中写入数据的辅助奇偶校验位
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申请号: US13122469申请日: 2009-12-16
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公开(公告)号: US20110252288A1公开(公告)日: 2011-10-13
- 发明人: Eran Sharon , Idan Alrod
- 申请人: Eran Sharon , Idan Alrod
- 申请人地址: IL KFAR SABA
- 专利权人: SANDISK IL LTD.
- 当前专利权人: SANDISK IL LTD.
- 当前专利权人地址: IL KFAR SABA
- 国际申请: PCT/IB2009/007789 WO 20091216
- 主分类号: G06F11/08
- IPC分类号: G06F11/08 ; G06F11/00
摘要:
Methods of writing data to and reading data from memory devices and systems for writing and reading data are disclosed. In a particular embodiment, a method includes writing data bits a first time into a memory. Auxiliary parity bits are written in the memory, where the auxiliary parity bits are computed based on the data bits. Subsequent to writing the data bits a first time and writing the auxiliary parity bits, the data bits are written a second time into the memory. Writing the data bits the first time and writing the data bits the second time are directed to one or more storage elements at a common physical address in the memory. Subsequent to writing the data bits the second time, the auxiliary parity bits are discarded while maintaining the data bits in the memory.
公开/授权文献
- US08437183B2 Auxiliary parity bits for data written in multi-level cells 公开/授权日:2013-05-07
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