发明申请
US20110254114A1 MAGNETORESISTIVE EFFECT ELEMENT 审中-公开
磁感应效应元件

MAGNETORESISTIVE EFFECT ELEMENT
摘要:
A magnetoresistive effect element includes a first ferromagnetic layer formed above a substrate, a second ferromagnetic layer formed above the first ferromagnetic layer, an insulating layer interposed between the first ferromagnetic layer and the second ferromagnetic layer and formed of a metal oxide, and a first nonmagnetic metal layer interposed between the insulating layer and the second ferromagnetic layer and in contact with a surface of the insulating layer on the side of the second ferromagnetic layer, the first nonmagnetic metal layer containing the same metal element as the metal oxide.
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